A method of conducting an in situ reliability test on a cross-section of a device with layered structure at micron-scale and at least two electrodes. The method includes steps of locating an electron transparent cross-sectional portion of the device in a holder and transmitting a direct current bias voltage to the cross-sectional portion of the device through at least two electrodes of the device, and observing and quantifying the microstructural changes of the device cross-section on the holder. A system for conducting an in situ reliability test on a device with a layered structure at a micron-scale and at least two electrodes is also provided.